A leap forward in RF semiconductor technology
The application of radio frequency semiconductor technology is expanding to higher frequencies, and the semiconductor industry is facing new challenges and opportunities.
The transition from traditional silicon materials to compound semiconductors has promoted the birth of a new generation of radio frequency devices. For the 5G advanced technology and 6G launched in 2027, the FR3 spectrum has become a new hot spot in the competition of radio frequency semiconductor technology, while the development of the Asia-terahertz spectrum is expected to start after 2030.
In satellite applications, gallium nitride (GaN) and gallium arsenide (GaAs) technologies compete fiercely on power output and frequency adaptability. UMS is developing more advanced GaN-SiC technology and advancing the research and development of high-power GaAs devices.
In Q/W-band satellite communications and D-band for ground applications, 60nm GaN-Si technology and 40nm GaAs LNA have been developed to provide efficient solutions for communications.
The development of radio frequency equipment in the future will increasingly rely on heterogeneous integration technologies, such as system-in-package (SiP), 2.5D and 3D integration, etc. These technologies are designed to find the best balance between performance and cost of radio frequency equipment.
Different application scenarios will optimize various parts of the transmit and receive links based on their own power, performance and cost requirements. This means that future radio frequency equipment will use a combination of technologies to adapt to diverse needs.
With the continuous innovation of high-frequency technology, satellite communications, automotive radar and defense technology, the radio frequency semiconductor industry will usher in huge development opportunities in the next few years. The rise of heterogeneous integration technology will become a key force in promoting the development of next-generation communication and sensing devices.
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